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| VDRM ITGQM ITSM VT0 rT VDClink = 2500 V = 3000 A = 30 kA = 1.5 V = 0.33 m = 1400 V Gate turn-off Thyristor 5SGA 30J2501 Doc. No. 5SYA1213-02 Jan. 05 * Patented free-floating silicon technology * Low on-state and switching losses * Annular gate electrode * Industry standard housing * Cosmic radiation withstand rating Blocking VDRM VRRM IDRM IRRM VDClink Repetitive peak off-state voltage Repetitive peak reverse voltage Repetitive peak off-state current Repetitive peak reverse current Permanent DC voltage for 100 FIT failure rate 2500 V 17 V 100 mA 50 mA 1400 V VD = VDRM VR = VRRM VGR 2V RGK = VGR 2V Ambient cosmic radiation at sea level in open air. Mechanical data (see Fig. 3) Fm A Mounting force Acceleration: Device unclamped Device clamped M DS Da Weight Surface creepage distance Air strike distance 50 m/s2 200 m/s2 1.3 kg 33 mm 15 mm min. max. 36 kN 44 kN ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SGA 30J2501 GTO Data On-state ITAVM ITRMS ITSM Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral 1300 A 2040 A 30 kA 51 kA 4.5x106 A2s 1.3x106 A2s VT VT0 rT IH On-state voltage Threshold voltage Slope resistance Holding current 2.5 V 1.5 V 0.33 m 100 A Tj = 25 C tP = tP = tP = tP = IT = IT = 10 ms 1 ms 10 ms 1 ms 3000 A 400 - 4000 A Tj = 125 C Tj = 125C Half sine wave, TC = 85 C After surge: VD = VR = 0V I2t Gate VGT IGT VGRM IGRM Gate trigger voltage Gate trigger current Repetitive peak reverse voltage Repetitive peak reverse current 1.2 V 4A 17 V 50 mA VGR = VGRM VD RA = 24 V = 0.1 Tj = 25 C Turn-on switching di/dtcrit Max. rate of rise of on-state current td tr ton(min) Eon Delay time Rise time Min. on-time Turn-on energy per pulse 500 A/s 1000 A/s 2.5 s 5 s 100 s 2 Ws f = 200Hz f = 1Hz VD = IT = IT = 3000 A, Tj = 125 C IGM = 30 A, diGdt = 20 A/s 0.5 VDRM Tj 3000 A 30 A 5 F = 125 C 300 A/s 20 A/s 5 di/dt = diG/dt = RS = IGM = CS = Turn-off switching ITGQM Max controllable turn-off current ts tf toff(min) Eoff IGQM Storage time Fall time Min. off-time Turn-off energy per pulse Peak turn-off gate current 25 s 3 s 100 s 4.7 Ws 1000 A 3000 A VDM = VDRM CS VD Tj = 5 F diGQ/dt = LS = 40 A/s 0.3 H VDRM 40 A/s = 1/2 VDRM VDM = 125 C diGQ/dt = ITGQ = ITGQM CS LS = 5 F RS 0.3 H = 5 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1213-02 Jan. 05 page 2 of 6 5SGA 30J2501 Thermal Tj RthJC Storage and operating junction temperature range Thermal resistance junction to case RthCH Thermal resistance case to heat sink Analytical function for transient thermal impedance: 22 K/kW 27 K/kW 12 K/kW 6 K/kW 3 K/kW Anode side cooled Cathode side cooled Double side cooled Single side cooled Double side cooled -40...125C Z thJC (t) = 4 i 1 5.4 1.2 2 4.5 0.17 3 1.7 0.01 4 0.4 0.001 R i(1 - e - t / i ) RI (K/kW) i (s) i=1 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1213-02 Jan. 05 page 3 of 6 5SGA 30J2501 Fig. 1 On-state characteristics ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1213-02 Jan. 05 page 4 of 6 5SGA 30J2501 Fig. 2 General current and voltage waveforms with GTO-specific symbols Fig. 3 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. page 5 of 6 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1213-02 Jan. 05 5SGA 30J2501 Reverse avalanche capability In operation with an antiparallel freewheeling diode, the GTO reverse voltage VR may exceed the rate value VRRM due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then driven into reverse avalanche. This condition is not dangerous for the GTO provided avalanche time and current are below 10 s and 1000 A respectively. However, gate voltage must remain negative during this time. Recommendation : VGR = 10... 15 V. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Doc. No. 5SYA1213-02 Jan. 05 Telephone +41 (0)58 586 1419 Fax +41 (0)58 586 1306 Email abbsem@ch.abb.com Internet www.abbsem.com |
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